EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...

The U.S. power transistor market was valued at USD 3.10 billion in 2025 and is projected to reach USD 6.43 billion by 2035, expanding at a CAGR of 9.55%. Growth is fueled by rising EV adoption driving ...

We’ve always been interested in fluidic logic and, based on [soiboi’s] videos, he is too. His latest shows how to use silicone and a vacuum to build a multiplexed dot matrix display.

Abstract: A novel gate-all-around (GAA) nanosheet field-effect transistor (NSFET) with bottom p-i-n isolation is proposed for the first time, which can effectively suppress the parasitic subchannel ...

Infinitesima completes Series B investment round led by Maverick Silicon; appoints industry veteran, Oreste Donzella, ...

Reverse polarity is one of the most common causes of circuit failure, from hobby projects to industrial systems. The good news is that a well-designed reverse polarity protection using MOSFET ...

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...

Abstract: In this study, we report the first experimental demonstration of a double-gated ferroelectric field-effect-transistor (DG-FeFET). Based on the TiO2 channel and HfLaO ferroelectric (FE) ...