Cross Section of Gate-All-Around Transistor and Wiring Applied Materials introduced three new chipmaking systems that boost ...

The team from Peking University led by Qiu Chenguang, a senior researcher, and Peng Lianmao, an academician of the Chinese Academy of Sciences, has developed nano-gate ferroelectric transistors with ...

The critical role of mechanical stress in FinFET performance and the importance of pitch control to minimize variability and optimize device parametric targets.

A joint research team led by Professors Donghee Son and Jin-Hong Park at SKKU has developed a stretchable, self-healing, and reconfigurable electronic circuit platform that can autonomously recover ...

Over the past few decades, electronics engineers have been trying to develop new neuromorphic hardware, systems that mirror the organization of neurons in the human brain. These systems could run ...

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.

New chipmaking systems boost the energy-efficient performance of Gate-All-Around transistors and wiring at 2nm and beyondViva pure radical treatment smoothens GAA silicon nanosheets with atomic-level ...

FinFET technology enabled lower leakage, reduced short-channel effects, and better performance at reduced voltages. It successfully extended CMOS scaling from the 22nm node through the 7nm generation ...

An advanced gate design could reshape EV and data center power systems.

Tamil Nadu has secured significant investments totaling Rs 5,980 crore. Japanese firm MinebeaMitsumi will invest Rs 1,980 ...

GaN-based electronics are known for their ability to reduce energy losses and shrink the size of power converters and related ...