This file type includes high resolution graphics and schematics. The spread of h FE values in a batch of transistors may be wide enough to cause unreliable performance during mass production of a ...
There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...
SAN FRANCISCO &#151 Researchers from the Israel Institute of Technology have developed what the university claims is a “transistor in a test tube”, built via sequence-specific molecular lithography.
Portland, Ore. — Next-generation semiconductors aim to harness the ballistic electron transport capabilities of pure carbon nanotubes, but until now there has been no easy way to integrate the tubes ...