EDN

GaN fundamentals: Hybrid structures, HEMT, and substrate choices

Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...
csis.org

Gallium Nitride: A Strategic Opportunity for the Semiconductor Industry

The rapid growth of critical technologies such as 5G telecommunications and electric mobility demands higher power densities, faster switching frequencies, and greater thermal resilience than is ...
EDN

GaN fundamentals: 2DEG, crystal structure, and figure of merit

Gallium nitride (GaN) power devices are redefining the limits of switching converters by combining wide bandgap physics with lateral HEMT structures optimized for fast, low-loss operation. This ...
Nasdaq

Navitas' GaN Power ICs Gaining Traction: What's Fueling It?

Navitas Semiconductor NVTS is a key player in the next generation of power semiconductors, driving innovation in GaN (gallium nitride) technologies. Its GaN business — branded as GaNFast, GaNSafe and ...
AppleInsider

Up to 16 HyperJuice 100W GaN chargers can be stacked on one outlet

Hyper has launched what it calls the first 65W and 100W GaN USB-A and USB-C HyperJuice chargers that can be stacked, allowing up to 16 chargers to run off a single wall outlet. HyperJuice are 65W and ...
Semiconductor Engineering

Driving Cost Lower and Power Higher With GaN

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...