A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...
Using a new fabrication technique, engineers have developed a diamond field-effect transistor (FET) with high hole mobility, which allows reduced conduction loss and higher operational speed. This new ...
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental building block of modern electronics. It is a field-effect transistor (FET) where the voltage applied to a terminal (gate) ...
At the December 2021 IEDM conference (a conference for people who design advanced semiconductors), IBM announced it was turning transistors on their heads to keep Moore’s Law scaling alive. The new ...
Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...
Scientists from a Lisbon, Portugal, research group at the Center of Materials Research made the first FET with a common sheet of paper for an interstrate layer. The research team, led by Associate ...
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