In an effort to gain a competitive edge in the cost-sensitive wireless communications arena, STMicroelectronics has added silicon-germanium (SiGe) biCMOS to its arsenal of process technologies. The ...

Jazz Offers Cost-Effective 0.13-micron SiGe BiCMOS Process Platform with 200GHz Transistors for Highest Performance System-on-Chip (SoC) Applications NEWPORT BEACH, Calif., April 11, 2007 -- Jazz ...

Royal Philips Electronics today introduced QUBiC4X, the latest addition to its highly successful QUBiC4 family of high-performance BiCMOS (Bipolar CMOS) process technologies. Based on ...

LONDON — Zarlink Semiconductor has developed an improved version of its sub-micron BiCMOS process technology that it is targeting for higher power and higher temperature power management chips. Dubbed ...

Plessey Semiconductors has started developing a 0.35 micron silicon germanium (SiGe) BiCMOS process technology on its 8-inch line at Roborough. “We have looked at SiGe bipolar and BiCMOS process ...

Selecting a silicon technology that deviates from today's mainstream CMOS foundry road maps may appear, at first glance, to be a risky proposition. While conventional wisdom states that standard CMOS ...

Targeting high frequency radio applications, NXP Semiconductors today announced the launch of a series of new products developed in the latest SiGe (silicon-germanium) process technology. Addressing ...

ESI-1002 enables SFP+ modules with sub-1 watt power consumption Overall SFP+ module shipment per year expected to be $2.5B; total revenue for chipmakers approximately $300M per year NEWPORT BEACH, ...

National Semiconductor has developed a proprietary silicon-on-insulator (SOI) BiCMOS analog process technology specifically for operational amplifier applications in the 0.9 V to 12 V supply voltage ...

National Semiconductor has revealed a fully-isolated silicon-on-insulator BiCMOS process for amplifiers. “We spent the last few years developing this specifically for precision analogue, aiming at low ...